Technical white paper

Optimizing Microsoft SQL Server 2017 with HPE 3PAR storage and HPE Memory-Driven Flash

Executive summary

The most difficult workload for an array to handle is the random read workload. The HPE 3PAR Storage Class Memory module option can boost an array's performance with random small block read workloads, typical of many Online Transaction Processing (OLTP) database workloads. The HPE 3PAR Storage Class Memory module, also known as HPE Memory-Driven Flash, decreases latency by adding a large second level read cache (Level-2 cache) closer to the CPU. The Level-2 cache is used as the level between the Dynamic Random-Access Memory (DRAM) and storage media. The read request first tries to satisfy the request from DRAM. If the request is not fulfilled, the HPE Memory-Driven Flash is checked. If the request is still not met, the data is then retrieved from the storage media.
Microsoft SQL Server (SQL Server) transactional workloads can be very read intensive. With the HPE Memory-Driven Flash option, the latency for the SQL read requests can be reduced, therefore, servicing the SQL request faster.
HPE Memory-Driven Flash is a new class of enterprise storage that enables every business to take advantage of the disruptive speed of memory, unleashing a new wave of insights and innovation. HPE 3PAR is about data management, not just storage. Information is too important to just store. HPE Memory-Driven Flash allows data to be managed and analyzed faster than ever before.